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| (R) STPS60170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF(max) FEATURES AND BENEFITS 2 x 30 A 170 V 175 C 0.76 V A1 K A2 K High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Low thermal resistance High frequency operation Avalanche specification A2 K A1 TO-220AB STPS60170CT Table 2: Order Code Part Number STPS60170CT Marking STPS60170CT DESCRIPTION Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in TO-220AB, this device is intended for use to enhance the reliability of the application. Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt dPtot * : --------------dTj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Tc = 150 C = 0.5 Per diode Per device Value 170 60 30 60 270 17300 -65 to + 175 175 10000 Unit V A A A W C C V/s Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10 ms sinusoidal tp = 1 s Tj = 25 C < 1 ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j - a ) September 2005 REV. 1 1/6 STPS60170C Table 4: Thermal Parameters Symbol Rth(j-c) Rth(c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Parameter Junction to case Per diode Total Coupling Value 1.0 0.7 0.4 Unit C/W Table 5: Static Electrical Characteristics (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25 C Tj = 125 C Tj = 25 C VF ** Forward voltage drop Tj = 125 C Tj = 25 C Tj = 125 C Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ Max. 35 Unit A mA VR = VRRM 8 35 0.94 IF = 30 A 0.72 0.97 0.86 0.76 V 1.05 0.92 IF = 60 A To evaluate the conduction losses use the following equation: P = 0.60 x IF(AV) + 0.053 IF (RMS) 2 2/6 STPS60170C Figure 1: Average forward power dissipation versus average forward current (per diode) PF(AV)(W) 30 d=0.2 d=0.5 d=1 d=0.1 d=0.05 Figure 2: Average forward current versus ambient temperature ( = 0.5, per diode) IF(AV)(A) 35 Rth(j-a)=Rth(j-c) 25 30 25 20 20 15 15 10 T Rth(j-a)=15C/W 10 T 5 IF(AV)(A) 0 0 5 10 15 20 25 30 35 5 d=tp/T tp d=tp/T 0 0 25 tp Tamb (C) 50 75 100 125 150 175 Figure 3: Normalized avalanche derating versus pulse duration PARM (t p ) PARM (1s) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM (t p ) PARM (25C) power 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 t p (s) 10 100 1000 Tj (C) 0 25 50 75 100 125 150 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) 350 300 250 200 150 TC=75C Figure 6: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 TC=50C 0.5 0.4 0.3 TC=125C IM t 100 50 0 1.E-03 Single pulse T 0.2 0.1 0.0 1.E-03 tP(s) 1.E-02 1.E-01 d =0.5 t(s) 1.E-02 1.E-01 1.E+00 d=tp/T tp 1.E+00 3/6 STPS60170C Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(A) 1.E+05 Tj=150C Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25C 1.E+04 Tj=125C 1.E+03 Tj=100C 1.E+02 Tj=75C 1000 1.E+01 Tj=50C 1.E+00 Tj=25C 1.E-01 0 VR(V) 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 VR(V) 100 1 10 100 1000 Figure 9: Forward voltage drop versus forward current (per diode, low level) IFM(A) 30 Figure 10: Forward voltage drop versus forward current (per diode, high level) IFM(A) 1000 25 Tj=125C (Maximum values) Tj=125C (Maximum values) 20 Tj=125C (Typical values) 100 Tj=125C (Typical values) 15 Tj=25C (Maximum values) 10 Tj=25C (Maximum values) 10 5 VFM(V) 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VFM(V) 1 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 4/6 STPS60170C Figure 11: TO-220AB Package Mechanical Data REF. H2 Dia L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D C A A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 6: Ordering Information Ordering type STPS60170CT Marking STPS60170CT Package TO-220AB Weight 2.20 g Base qty 50 Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm. Maximum torque value: 0.7 Nm. Table 7: Revision History Date 16-Sep-2005 Revision 1 First issue. 5/6 Description of Changes STPS60170C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
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